PART |
Description |
Maker |
BB804 |
Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) 18 V, SILICON, VARIABLE CAPACITANCE DIODE
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SIEMENS AG Siemens Semiconductor Group
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1T362 |
Silicon Variable Capacitance Diode Designed For Electronic Tuning Of TV Tuner(硅可变电容二极管(用于电视调谐器的电子调谐)) 硅变容二极管设计电子调谐电视调谐器(硅可变电容二极管(用于电视调谐器的电子调谐) Silicon Variable Capacitance Diode
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Sony, Corp. Sony Corporation
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1N5474 1N5448A 1N5443B 1N5447C 1N5445A 1N5476A JAN |
68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 56 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
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GC1310 KV1963A KV1953A KV1923A KV1913A1 KV2123 KV1 |
C BAND, 3.9 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.8 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE ENHANCED PERFORMANCE SURFACE MOUNT EPSM垄芒Hyperabrupt Varactor Diodes TM ENHANCED PERFORMANCE SURFACE MOUNT EPSM?⑷yperabrupt Varactor Diodes TM ENHANCED PERFORMANCE SURFACE MOUNT EPSM?Hyperabrupt Varactor Diodes TM C BAND, 16.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 1.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
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Microsemi Corporation MICROSEMI CORP-LOWELL
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BB535 Q62702-B580 |
Silicon Variable Capacitance Diode (For UHF and TV/TR tuners Large capacitance ratio, low series resistance) From old datasheet system
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SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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HVC383B |
20 pF, SILICON, VARIABLE CAPACITANCE DIODE Variable Capacitance Diode for VCO
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RENESAS[Renesas Electronics Corporation]
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RKV651KL |
31.25 pF, 15 V, SILICON, VARIABLE CAPACITANCE DIODE Variable Capacitance Diode for FM tuner IC
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Renesas Electronics Corporation
|
HVU306C |
Diodes>Variable Capacitance VARIABLE CAPACITANCE DIODE FOR VHF TUNER
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Renesas Electronics Corporation
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ADVANCEDSEMICONDUCTORINC-AT902001 AT3000A AT3000A2 |
X BAND, 0.4 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE X BAND, 0.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 1.2 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.4 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE L BAND, 3.9 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE L-S BAND, 3.3 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE S-C BAND, 2.2 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE VHF BAND, 27 pF, 90 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
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ADVANCED SEMICONDUCTOR INC
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1N4800A 1N4798 |
100 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 68 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
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BB112 Q62702-B240 |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8.0 V) Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ?8.0 V) Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ˇ 8.0 V) Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8.0 V) From old datasheet system
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SIEMENS[Siemens Semiconductor Group] SIEMENS AG
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